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| SEMICONDUCTOR HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S 24A, 600V, UFS Series N-Channel IGBTs Description The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. January 1997 Features * 24A, 600V at TC = 25oC * 600V Switching SOA Capability * Typical Fall Time . . . . . . . . . . . . . . 230ns at TJ = 150oC * Short Circuit Rating * Low Conduction Loss Ordering Information PART NUMBER HGTP12N60C3 HGT1S12N60C3 HGT1S12N60C3S PACKAGE TO-220AB TO-262AA TO-263AB BRAND P12N60C3 S12N60C3 S12N60C3 Terminal Diagram N-CHANNEL ENHANCEMENT MODE C NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in Tape and Reel, i.e., HGT1S12N60C3S9A. Formerly Developmental Type TA49123. G E Packaging JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) JEDEC TO-262AA EMITTER COLLECTOR GATE COLLECTOR (FLANGE) A JEDEC TO-263AB M A A COLLECTOR (FLANGE) GATE EMITTER HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951 CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright (c) Harris Corporation 1997 File Number 4040.3 3-29 HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S 600 24 12 96 20 30 24A at 600V 104 0.83 100 -40 to 150 260 4 13 Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC, Figure 14 . . . . . . . . . . . . . . . . . . . .SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RGE = 25. UNITS V A A A V V W W/oC mJ oC oC s s Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250A, VGE = 0V IC = 10mA, VGE = 0V VCE = BVCES VCE = BVCES TC = 25oC TC = 150oC TC = 25oC TC = 150oC TC = 25oC MIN 600 24 3.0 VCE(PK) = 480V VCE(PK) = 600V 80 24 TYP 30 1.65 1.85 5.0 MAX 250 1.0 2.0 2.2 6.0 100 UNITS V V A mA V V V nA A A Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Leakage Current Collector-Emitter Saturation Voltage VCE(SAT) IC = IC110, VGE = 15V IC = 250A, VCE = VGE VGE = 20V TJ = 150oC RG = 25 VGE = 15V L = 100H Gate-Emitter Threshold Voltage Gate-Emitter Leakage Current Switching SOA VGE(TH) IGES SSOA Gate-Emitter Plateau Voltage On-State Gate Charge VGEP QG(ON) IC = IC110, VCE = 0.5 BVCES IC = IC110, VCE = 0.5 BVCES VGE = 15V VGE = 20V - 7.6 48 62 14 16 270 210 380 900 - 55 71 400 275 1.2 V nC nC ns ns ns ns J J oC/W Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) Thermal Resistance NOTE: tD(ON)I tRI tD(OFF)I tFI EON EOFF RJC TJ = 150oC, ICE = IC110, VCE(PK) = 0.8 BVCES, VGE = 15V, RG = 25, L = 100H 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include diode losses. 3-30 HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S Typical Performance Curves ICE, COLLECTOR-EMITTER CURRENT (A) DUTY CYCLE <0.5%, VCE = 10V PULSE DURATION = 250s ICE, COLLECTOR-EMITTER CURRENT (A) 80 70 60 50 40 30 20 10 0 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) TC = 25oC TC = -40oC TC = 150oC 80 70 60 50 40 30 20 10 0 0 2 4 6 8 7.0V VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 7.5V 10 9.0V 8.5V 8.0V 10.0V PULSE DURATION = 250s, DUTY CYCLE <0.5%, TC = 25oC VGE = 15.0V 12.0V FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS ICE, COLLECTOR-EMITTER CURRENT (A) ICE, COLLECTOR-EMITTER CURRENT (A) 80 70 60 50 40 30 20 10 0 0 1 2 3 TC = 25oC TC = -40oC TC = 150oC PULSE DURATION = 250s DUTY CYCLE <0.5%, VGE = 10V 80 70 60 50 40 30 20 10 0 0 1 2 3 4 5 TC = 150oC PULSE DURATION = 250s DUTY CYCLE <0.5%, VGE = 15V TC = -40oC TC = 25oC 4 5 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 3. COLLECTOR-EMITTER ON-STATE VOLTAGE FIGURE 4. COLLECTOR-EMITTER ON-STATE VOLTAGE tSC , SHORT CIRCUIT WITHSTAND TIME (s) ICE , DC COLLECTOR CURRENT (A) VGE = 15V VCE = 360V, RGE = 25, TJ = 125oC 120 ISC 15 100 80 10 60 40 tSC 5 10 13 11 12 14 VGE , GATE-TO-EMITTER VOLTAGE (V) 20 15 20 15 10 5 0 25 50 75 100 125 TC , CASE TEMPERATURE (oC) 150 FIGURE 5. DC COLLECTOR CURRENT AS A FUNCTION OF CASE TEMPERATURE FIGURE 6. SHORT CIRCUIT WITHSTAND TIME 3-31 ISC, PEAK SHORT CIRCUIT CURRENT (A) 25 20 140 HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S Typical Performance Curves 100 tD(ON)I , TURN-ON DELAY TIME (ns) (Continued) 400 tD(OFF)I , TURN-OFF DELAY TIME (ns) TJ = 150oC, RG = 25, L = 100H, VCE(PK) = 480V TJ = 150oC, RG = 25, L = 100H, VCE(PK) = 480V 300 VGE = 15V 50 30 VGE = 10V VGE = 10V 200 20 VGE = 15V 10 5 10 15 20 25 30 ICE , COLLECTOR-EMITTER CURRENT (A) 100 5 25 10 15 20 ICE , COLLECTOR-EMITTER CURRENT (A) 30 FIGURE 7. TURN-ON DELAY TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT FIGURE 8. TURN-OFF DELAY TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT 200 TJ = 150oC, RG = 25, L = 100H, VCE(PK) = 480V tRI , TURN-ON RISE TIME (ns) 100 VGE = 10V tFI , FALL TIME (ns) 300 TJ = 150oC, RG = 25, L = 100H, VCE(PK) = 480V 200 VGE = 10V or 15V VGE = 15V 10 100 90 80 5 10 15 20 25 ICE , COLLECTOR-EMITTER CURRENT (A) 30 5 25 10 15 20 ICE , COLLECTOR-EMITTER CURRENT (A) 30 5 FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT FIGURE 10. TURN-OFF FALL TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT 2.0 EOFF , TURN-OFF ENERGY LOSS (mJ) EON , TURN-ON ENERGY LOSS (mJ) TJ = 150oC, RG = 25, L = 100H, VCE(PK) = 480V 3.0 TJ = 150oC, RG = 25, L = 100H, VCE(PK) = 480V 2.5 2.0 1.5 VGE = 10V or 15V 1.0 0.5 0 1.5 VGE = 10V 1.0 VGE = 15V 0.5 0 5 25 10 15 20 ICE , COLLECTOR-EMITTER CURRENT (A) 30 5 10 15 20 25 ICE , COLLECTOR-EMITTER CURRENT (A) 30 FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF COLLECTOR-EMITTER CURRENT FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF COLLECTOR-EMITTER CURRENT 3-32 HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S Typical Performance Curves 200 fMAX , OPERATING FREQUENCY (kHz) 100 VGE = 10V VGE = 15V fMAX1 = 0.05/(tD(OFF)I + tD(ON)I) fMAX2 = (PD - PC)/(EON + EOFF) PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RJC 1 5 10 20 ICE, COLLECTOR-EMITTER CURRENT (A) 30 = 1.2oC/W (Continued) 100 TJ = 150oC, VGE = 15V, RG = 25, L = 100H 80 TJ = 150oC, TC = 75oC RG = 25, L = 100H ICE, COLLECTOR-EMITTER CURRENT (A) 60 LIMITED BY CIRCUIT 40 10 20 0 0 100 200 300 400 500 600 VCE(PK), COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF COLLECTOR-EMITTER CURRENT FIGURE 14. SWITCHING SAFE OPERATING AREA VCE , COLLECTOR - EMITTER VOLTAGE (V) 2500 FREQUENCY = 1MHz 2000 C, CAPACITANCE (pF) CIES 600 IG REF = 1.276mA, RL = 50, TC = 25oC 15 VGE, GATE-EMITTER VOLTAGE (V) 480 VCE = 600V 12 1500 360 9 1000 240 VCE = 400V 120 VCE = 200V 6 500 CRES 0 0 COES 25 3 5 10 15 20 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 0 0 10 20 30 40 QG , GATE CHARGE (nC) 50 60 0 FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOREMITTER VOLTAGE FIGURE 16. GATE CHARGE WAVEFORMS ZJC , NORMALIZED THERMAL RESPONSE 100 0.5 0.2 0.1 10-1 0.05 0.02 0.01 SINGLE PULSE 10-2 10-5 10-4 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC 10-3 10-2 10-1 t1 , RECTANGULAR PULSE DURATION (s) 100 101 PD t2 t1 FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE 3-33 HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S Test Circuit and Waveform L = 100H RHRP1560 VGE 90% 10% EOFF EON RG = 25 + VCE 90% VDD = 480V ICE 10% tD(OFF)I tFI tRI tD(ON)I - FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 19. SWITCHING TEST WAVEFORMS Handling Precautions for IGBTs Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic zener diode from gate to emitter. If gate protection is required an external zener is recommended. ECCOSORBDTM is a Trademark of Emerson and Cumming, Inc. Operating Frequency Information Operating frequency information for a typical device Figure 13) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(tD(OFF)I+ tD(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on- state time for a 50% duty factor. Other definitions are possible. tD(OFF)I and tD(ON)I are defined in Figure 19. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJMAX. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJMAX TC)/RJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 13) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 19. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turnoff. All tail losses are included in the calculation for EOFF; i.e. the collector current equals zero (ICE = 0). 3-34 |
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